| 摘要 |
A method of manufacturing semiconductor devices, comprising the steps of depositing a thin metallic film on an insulative film formed on a semiconductive substrate, and projecting said thin metallic film with ion beams bombarded from above to partially inject the metal atoms of said thin metallic film into said insulative film, thereby changing the inversion threshold voltage of the surface of said semiconductive substrate. By varying the amount of the projection ion beams and the thickness and kind of said thin metallic film, the inversion threshold voltage of said semiconductive substrate can be effectively controlled.
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