| 发明名称 |
Metal oxide/semiconductor device |
| 摘要 |
The invention relates to a metal oxide/semiconductor device in which a film (41a, 41b, 41c) which is composed of crystalline BeO and which acts as a gate insulating film between a gate electrode (42) and the semiconductor substrate (11) is applied to a semiconductor substrate (11). <IMAGE>
|
| 申请公布号 |
DE3100670(A1) |
申请公布日期 |
1981.11.19 |
| 申请号 |
DE19813100670 |
申请日期 |
1981.01.12 |
| 申请人 |
FUTABA DENSHI KOGYO K.K. |
发明人 |
MORIMOTO,KIYOSHI;TAKAGI,TOSHINORI |
| 分类号 |
H01L29/78;H01L21/283;H01L21/84;H01L29/51;(IPC1-7):H01L29/78;H01J37/31;H01L21/31;H01L21/94 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
