Solid-state imaging device.

摘要

A solid-state imaging device having picture elements each of which is. composed of a photoelectric conversion element (photodiode 13, 12) and a MOS transistor (13, 15, 34) as a swithing element and which are arranged in the form of a matrix, and a scanning mechanism which sequentially scans the picture elements to sequentially read out photoelectric conversion signals. To reduce smear and improve sensitivity, at least a high-impurity-concentration diffusion layer (34) serving as an output terminal of the MOS transistor if formed on an insulator layer (16) for isolating the elements. Thus, the tendency of the output terminal to receive noise photoelectrons from the substrate (12), and its parasitic capacitance (31), are both reduced.