| 摘要 |
PURPOSE:To form an insulation and isolation without crack nor bird beak by repeatedly performing the accumulation of polysilicon and the oxidation thereof on V-shaped grooves formed on a substrate, forming the oxidized film of thick polysilicon and then flattening the film. CONSTITUTION:Polysilicon 4 of 2,000Angstrom is accumulated on a substrate formed with V-shaped grooves, and oxidation is performed in the range of polysilicon thus accumulated. After the polysilicon 7 is further accumulated in a thickness of 4,000Angstrom , it is oxidized. Polysilicon 9 of 8,000Angstrom is accumulated at the third time, and the similar oxidation is performed. The oxidized film of thick polysilicon thus accumulated is flattened by ion milling, and a nitrided film is removed. In this manner, insulation and isolation without bird beak is performed. |
