发明名称 |
Short circuit prevention in the manufacture of semiconductor devices |
摘要 |
A first level interconnection layer of substantially a given width is formed on an insulating film on a semiconductor substrate. At least two second level interconnection layers, which cross the first level interconnection layer on another insulating layer, are formed. In a step for forming the first level interconnection layer, projections are formed at each side of the first level interconnection layer between the crossings of the second level interconnection layers. The total width of the first level interconnection layer including the width of the projection is larger than the given width. After the second level interconnection layers are formed, the projections of the first level interconnection layer are removed along with any second level interconnection layer material remaining intermediate the second level interconnection layers, thereby to prevent short-circuiting between the second level interconnection layers.
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申请公布号 |
US4363696(A) |
申请公布日期 |
1982.12.14 |
申请号 |
US19810258415 |
申请日期 |
1981.04.28 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
NAGAKUBO, YOSHIHIDE;IIZUKA, HISAKAZU |
分类号 |
H01L21/302;H01L21/30;H01L21/3065;H01L21/768;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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