| 摘要 |
PURPOSE:To prevent the production of a defect due to the thermal influence at the time of selective oxidation by forming a material layer to be oxidized on a semiconductor substrate, selectively forming an antioxidative mask on the layer to selectively oxidize the layer and removing the mask and the remaining layer. CONSTITUTION:A P type single crystal silicon substrate 1 is thermally oxidized to grow a thermally oxidized film 2 on the main surface, a polycrystalline silicon is then grown in vapor phase, and a phosphorus-doped polycrystalline silicon layer 3 is accumulated. Then, a nitrided silicon pattern 4 is selectively formed as an antioxidative mask, a polycrystalline silicon layer 3 is selectively oxidized, thereby forming a thermally oxidized film 6. After the pattern 4 is then removed, the remaining polycrystalline silicon layer 3' is removed. Subsequently, the projections of plasma CVD SiO2 7 is formed covering the whole surface, and the SiO2 7 and the film 6 are substantially etched and removed. Then, an n-channel MOSIC is formed with the film 6 as an element isolating region. |
