| 摘要 |
PURPOSE:To obtain a Schottky diode containing the guard ring of a small junction capacity by extending and inserting part of the P-type guard ring layer between the electrode and the insulator film of the N-type Si substrate. CONSTITUTION:SiO27 and P-type poly Si34 are laminated on N-type Si substrate; the eave part is formed to layer 34 by the selective etching; and the substrate is covered again with P-type poly Si51. Then the ion etching is applied to leave layer 34 and layer 37 under the eave part in order to form layer 38. The heat treatment is carried out to form P-diffusion layer 4 from layer 38, and then guard ring 5 and pn junction 3 are formed respectively. After this, metal layer 18 is laminated to obtain Schottky junction 9 and then to form the ohmic junction between junction 9 and P-layer 4. Electrode 8 is formed and layer 38 is etched to form layer 10 with electrode 11 attached to the rear surface of the substrate. In this case, layer 7 is distant away from the electrode by the amount of the thickness of layer 10, and thus no alloy is produced with the substrate. As a result, layer 4 can be made shallow with reduced capacity of junction 3, accordingly facilitating the manufacture and increasing the yield. |
