Schottky Barrier diode with controlled characteristics

摘要

A self-isolated Schottky Barrier diode structure and method of fabrication are disclosed for generating a device having controlled characteristics. An opening is made through an oxide layer over a central region of an n-type semiconductor substrate. The opening has inclined sidewalls over an annular region surrounding the central region of the substrate. An n-type dopant layer is ion implanted through the opening and the surrounding oxide layer. This controls the barrier height for the Schottky Barrier diode and controls the lifetime of minority carriers in the outside region of the substrate. This has the effect of minimizing PNP parasitic transistor action. A Schottky Barrier contact is formed in the opening through an oxide layer creating a rectifying junction with the semiconductor substrate in the central region.