Method of growing oxide layer on indium gallium arsenide

摘要

A method of growing a water insoluble native plasma oxide on an In0.53Ga0.47As layer of the type that is useful in the fabrication of MOS type devices is disclosed. Oxygen is bubbled through a water chamber in order to introduce water vapor into the growth chamber during the growing process. The InGaAs layer is first sputter etched in the oxygen plasma while a negative potential is applied to the semiconductor structure. The pressure is then increased and the oxides are grown while a positive potential is applied to the semiconductor structure.