| 发明名称 |
Multi-layer contact for a semiconductor arrangement |
| 摘要 |
In a multi-layer contact for a semiconductor arrangement having at least two layers which consist of different metals or metal alloys, a semiconductor layer is located between at least two of these layers.
|
| 申请公布号 |
DE3135007(A1) |
申请公布日期 |
1983.03.24 |
| 申请号 |
DE19813135007 |
申请日期 |
1981.09.04 |
| 申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
GOLDBACH,GUENTER,DR. |
| 分类号 |
H01L23/482;H01L23/492;(IPC1-7):01L23/48;01L31/18;01L31/06;01L21/60 |
主分类号 |
H01L23/482 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
