发明名称 |
Method of fabricating a conductive metal silicide structure. |
摘要 |
<p>A method of fabricating a silicide structure includes depositing a metal, e.g., molybdenum or tungsten, directly onto a thin insulating layer (12) of silicon dioxide and/or silicon nitride formed on a semiconductor substrate (10), co-depositing the metal and silicon onto the metal layer (20) and then depositing silicon (24) onto the co-deposited metal-silicon layer (22). This structure is annealed at a temperature sufficient to form a metal silicide between the thin insulating layer (12) and the layer of silicon (24). The silicon layer (24) serves as a source of silicon for the metal layer (20) which is consumed during the annealing step to form, along with the co-deposited metal-silicon layer (22), a relatively thick metal silicide layer directly on the thin silicon dioxide layer (12). A sufficiently thick silicon layer (24) is initially provided on the codeposited metal-silicon layer (22) so that a portion of the initial silicon layer remains after the annealing step has been completed. This excess silicon may be oxidized to form a passivating layer on top of the thick metal silicide layer.</p> |
申请公布号 |
EP0075085(A2) |
申请公布日期 |
1983.03.30 |
申请号 |
EP19820106251 |
申请日期 |
1982.07.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GEIPEL, HENRY JOHN, JR.;NESBIT, LARRY ALAN |
分类号 |
H01L29/78;H01L21/027;H01L21/28;H01L21/3205;H01L21/321;H01L21/768;H01L23/52;H01L29/423;H01L29/43;H01L29/49;(IPC1-7):01L21/285;01L21/90 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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