Polycrystalline silicon interconnections for bipolar transistor flip-flop.

摘要

The two transistors of a bipolar flip-flop structure are interconnected by using a polycrystalline silicon/metal silicide sandwich structure. The polycrystaline silicon is doped to correspond to the underlying regions of the transistor structures, and undesired PN junctions created thereby are eliminated by depositing refractory metal silicide on the upper surface of the polycrystalline silicon.