发明名称 |
Microwave controlled field effect switching device |
摘要 |
A microwave switching device replacing PIN diodes and operating at higher speeds requires reduced switching current. A field effect controlled device is utilized with no ground plane, for elimination of source-ground and drain-ground capacitance. Massive source and drain structures reduce terminal inductance. A low resistance active region provides dynamic switching capability improving over prior art devices in operating frequencies and speeds.
|
申请公布号 |
US4387386(A) |
申请公布日期 |
1983.06.07 |
申请号 |
US19800157758 |
申请日期 |
1980.06.09 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
发明人 |
GARVER, ROBERT V. |
分类号 |
H01L29/812;(IPC1-7):H01L29/80;H01L29/78 |
主分类号 |
H01L29/812 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|