| 摘要 |
<p>A semiconductor memory device comprises a plurality of memory cells (MCA), each having a capacitor (28), and peripheral circuits (23), integrated on a semiconductor substrate (20). The capacitor has a storage electrode (30) and an opposite electrode (31) which is connected to a ground. The ground supply line (26 b, e) connected to the opposite electrode (31) of each capacitor (28) is physically separate and independent of other ground supply lines (26 a, c, d, f, g) connected to the peripheral circuits (23) over its entire length between a common portion (25, 32) having an impedance lower than the impedance of any ground line (26) so that data stored in the capacitors (28) is prevented from being destroyed by voltage fluctuations generated in the ground supply line (26 b, e) by the operation of the peripheral circuits (23).</p> |
