发明名称 MOS TYPE SEMICONDUCTOR IC
摘要 PURPOSE:To allow a right operation speed, by changing the output potential of a potential generation mean in non-reversible manner. CONSTITUTION:A P channel MOS transistor 1 and a fuse element 2 are connected in series between the point of the impression of positive polarity source voltage VDD and the point of the impression of earth voltage VSS, and the gate of the MOS transistor 1 is connected to the point of VSS impression. To series connection point of the MOS transistor 1 and the fuse element 2, the gates of the P channel MOS transistor 3 and the N channel MOS transistor 4 are connected, and the potential VO is outputted from both series connection point. When the fuse element 2 is not fused, in oder that the MOS transistor 3 is ON, and the MOS transistor 4 is OFF, the output potential VO becomes the VDD side potential VH. On the other hand, when the fuse element 2 is fused, the MOS transistor 3 becomes OFF, and the MOS transistor 4 becomes ON, and accordingly the output potential VO becomes the VSS side potential VL. Since the fuse element, 2 once fused, does not return to the original, the change from the potential VH to the potential VL is regarded as a non-reversible change.
申请公布号 JPS58102551(A) 申请公布日期 1983.06.18
申请号 JP19810201837 申请日期 1981.12.15
申请人 TOKYO SHIBAURA DENKI KK 发明人 KONISHI SATOSHI
分类号 H01L21/8234;H01L27/088;H01L29/78;H03K19/003 主分类号 H01L21/8234
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