| 摘要 |
PURPOSE:To prevent a decrease in resin film thickness by plasma by a method wherein an element is isolated from a plasma at the time of press putter by an isolation means such as a cover or a hangar. CONSTITUTION:After mounting an element 17 being treated on an electrode 16, a valve 11 is opened to evacuate a bell jar 8 with a rotary pump 13. Next, the valve 11 is closed, and a valve 12 and a main valve 9 are opened to evacuate highly with a diffusion pump 10. At that time, a cover 10 is closed to prevent the element 17 froem the adhesion of dust. When the inside of the bell jar 8 becomes high vacuum, argon gas is poured in the bell jar to obtain suitable gas pressure, and presputter is started by applying a power from a high-frequency power source 18. A cover 19 is surely colsed. In this way, the cover 19 prevents the penetration of plasma and a decrease in film thickness of resin on the element 17 can be prevented. After completing presputter, the cover 19 is opened to perform sputter, and a sputter film is formed on the element 17. |
