| 摘要 |
In this method, the starting point is SiO2 and carbon having a boron and phosphorus content of < 1 ppm. The molten silicon produced after reduction in an arc is caused to solidify in an inert-gas atmosphere in a preheated trough (1) by uniform and controlled removal of heat from the melt surface, the crystallisation process being accelerated, for example, by introducing a thin silicon rod (2). The solidified ingot (5) is then separated from the residual melt (6) containing the impurities. The novel method is capable of removing, in particular, impurities, such as titanium, vanadium, iron, molybdenum, zirconium, which reduce the efficiency of the solar cells. <IMAGE>
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