| 摘要 |
In a switching matrix device with field-effect transistors as switching elements, the crosstalk attenuation in the case of high frequencies is to be improved. For this purpose, a second MOS field-effect transistor is connected in each switching matrix in such a manner that the stray source-gate capacitances remain effective as reactive impedances in the blocked state of the switching element and, together with a partial drain-source capacitance, form a capacitive voltage divider.
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