| 摘要 |
<p>Improved self-aligned semiconductor devices are made using two sets of superposed pattern forming layers; a master mask layer set (105) containing the self-aligned patterns, and a pattern selector layer set (107) which allows different apertures in the master mask layer to be selectively re-opened so that different device regions may be sequentially formed. The master mask layer (105) is a double layer of a first material (105a) resistant to typical device forming processes, covered by a second etch stop material (105b). The selector layer (107) may be a single process resistant material or a double layer (107a-b). Using combinations of silicon oxide and nitride, the process is applied to the formation of silicon islands (30) with emitters (24) and emitter (27), base (28), and collector contacts (29) self-aligned to each other and a surrounding oxide isolation region (26).</p> |
