| 发明名称 |
Process for the simultaneous production of hyperfrequency diodes having an incorported encapsulation and diodes made by said process. |
| 摘要 |
<p>The invention relates to semiconductor junction devices and to their production process. The object of the invention is a diode produced by a simultaneous process in which the junction is limited to its active portion (7) and is inserted in a dielectric (10) acting as a support, which avoids the use of a package. The invention is especially applicable to the production of avalanche and Gunn effect semiconductors, to mixer diodes and to varicap diodes. <IMAGE></p> |
| 申请公布号 |
EP0085607(A2) |
申请公布日期 |
1983.08.10 |
| 申请号 |
EP19830400164 |
申请日期 |
1983.01.25 |
| 申请人 |
THOMSON-CSF |
发明人 |
HENRY, RAYMOND;HEITZMANN, MICHEL |
| 分类号 |
H01L47/02;H01L21/78;H01L23/482;H01L29/864;(IPC1-7):01L21/78;01L23/48 |
主分类号 |
H01L47/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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