发明名称 EXFOLIATION OF RESIST
摘要 PURPOSE:To completely exfoliate poly (fluoroalkyl alpha-haloacrylate) and copolymer by a method wherein an organic solution in which a base was dissolved is used as an exfoliating solution. CONSTITUTION:The exfoliating solution is made by dissolving 0.5-30wt% or thereabout of an inorganic or organic base such as NaOH, methoxy Na and the like into petroleum ether and the like. When the resist, consisting of a single polymer of acrylic monomer of the prescribed structure having the alkyl wherein X was substituted by F, Cl and Br and H was replaced by one or more of F, or a copolymer wherein two or more of said monomer groups, or a copolymer wherein said monomer and other vinyl monomer, is soaked in the prepared exfoliating solution of 15-70 deg.C for 0.5-15min or thereabout or the exfoliating solution is sprayed on the resist, the resistor is brought into the state of low molecular weight by creating the reaction such as dehydrogen-chloride, hydrolysis, principal chain cleavage and the like by a base, and at the same time, the resist is turned to a water soluble state. Accordingly, when the above is processed by pure water after treatment by the exfoliating solution, the residue of polymer can be removed completely.
申请公布号 JPS58139430(A) 申请公布日期 1983.08.18
申请号 JP19820021288 申请日期 1982.02.15
申请人 TORAY KK 发明人 KATAOKA MUTSUO
分类号 H01L21/30;G03F7/42;H01L21/027 主分类号 H01L21/30
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