Photodiode array.

摘要

A photodiode array imager (50) is described which utilizes polysilicon isolation in place of the normal field implant and field oxide isolation techniques for the puroose of reducing peripheral leakage current. A polysilicon layer 54 is utilized to isolate the sensor structure. This polysilicon layer is grown over a thin gate oxide (52) which has received a threshold enhancement implant with low value in relation to the compensation implant (16).