| 摘要 |
PURPOSE:To perform effective isolation of element by a method wherein a single crystal insulator layer is formed on a single crystal Si substrate, and a single crystal Si is epitaxial-formed after selectively opening window. CONSTITUTION:The MgO.Al2O3 layer 2 is formed on the Si substrate 1 by a CVD method. An SiO2 film 5 is superposed, and the layer 2 is etched by opening window 5c. When the mask 5 is removed, and the single crystal Si is laminated by a CVD method, a single crystal Si 7a of high quality equal to that of the substrate grows on the exposed part 1a of the substrate, and even the single crystal Si 7b on the MgO.Al2O3 2 is grown at a high quality of the same degree as that of the layer 7a by the influence thereof. Next, SiO2 layers 8 are formed by selectively oxidizing the layer 7a, and made to contact with the MgO.Al2O3. By this treatment, the surface of the layers 8 are finished flat, thus disconnections are not generated, and therefore Si single crystal regions 7b' which are perfectly isolated by SiO2 at the bottom and side surface can be obtained. |
