| 摘要 |
PURPOSE:To facilitate the integration without using metallic electrode wirings by a method wherein an N<+> layer is made to contact with an N-layer of the first P-N junction, then a P<+> layer is provided being adjacent thereto, and further a P-layer constituting the second P-N junction is joined being adjacent thereto, when diodes having P-N junctions are connected in multistages in series. CONSTITUTION:The first diode D1 is constituted of the P-layer 4 and the N- layer 3, and the N<+> layer 10 is made to contact with the layer 3. The second D2 is constituted also of the P-layer 4 and the N-layer 3, and the P<+> layer 11 is made to contact with the layer 4. The layers 10 and 11 are contacted, when the two diodes D1 and D2 constituted in this manner are stacked in multistages. Thereafter, a metallic electrode 5 is mounted on the side of the layer 4 of the diode D1, and a metallic electrode 6 on the side of the layer 3 of the diode D2, respectively, then a power source 12 is connected therebetween, and a forward directional bias is given to the P-N junction between the diodes D1 and D2. Thus, a voltage shifter is constituted in a small area, and conductors to connect between metallic electrodes are unnecessitated. |
