Integrated circuit devices comprising dielectric isolation regions and methods for making such devices.

摘要

A method is proposed for manufacturing a semiconductor device, which comprises forming groove(s) (103) having a vertical wall in a semiconductor substrate (101); doping the same type of impurity as that of the substrate (101) at a dose of not less than 1 x 1014 cm-2 or the opposite type of impurity to that of the substrate (101) in said groove(s) (103) to form an impurity region (104); filling the groove(s) (103) with an insulating material to form a field region (106). A semiconductor device having an impurity region (104) of the same conductivity type as that of the semiconductor substrate (101) under a buried field region and of a sheet resistance ps = 50 ohms/D is also proposed.