| 摘要 |
PURPOSE:To facilitate the leading of a source electrode to an external location and shrink the element area by a method wherein a gate electrode is built in a horizontal hole under the main surface. CONSTITUTION:Between semiconductor layers 4, 6 with one conductive type, a semiconductor layer 5 of the other conductive type is formed, for the construction of a vertical MOS-FET substrate. In this three-layer substrate, a hole is provided on the main surface to reach the lowest semiconductor layer 4, whereafter a horizontal hole is provided in parallel with the main surface. The horizontal hole serves as a gate electrode 3, the main surface as a source electrode 1, and the rear side as a drain electrode 2. With the device being constructed as such, an MOS-FET is obtained, small in element area, easy to lead the source electrode 1 to an external location. |
