| 摘要 |
PURPOSE:To prevent insufficient fitting of a mask and lateral diffusion of impurity, by a method wherein unrequired oxide film on the surface of compound semiconductor of group III-V is removed, and silicon nitride film is formed thereon through silicon dioxide film. CONSTITUTION:Surface of a semiconductor crystal 1 of compound of gruop III-V is etched and oxide layer of the surface is removed and then a first layer 2 of silicon dioxide is formed. A second layer 3 of silicon nitride is formed on the layer 2. An aperture 4 is provided on the layers 2, 3 so that surface of the crystal 1 is exposed and impurity is diffused into the crystal 1. In this constitution, insufficient fitting of a mask and lateral diffusion of the impurity can be prevented, thereby yield, repeatability and control property in the manufacturing process of semiconductor can be improved significantly. |
