发明名称 |
Semiconductor integrated circuit |
摘要 |
Well regions of p-type are disposed in a surface region of an n-type Si substrate of a semiconductor integrated circuit. The p-type well regions are arranged in the shape of islands, and various semiconductor elements are formed in the p-type well islands. The substrate surface region between the p-type well islands is filled with a depletion layer, and an interconnection layer is disposed on an insulating film over that body region contained within the depletion layer.
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申请公布号 |
US4419684(A) |
申请公布日期 |
1983.12.06 |
申请号 |
US19810224946 |
申请日期 |
1981.01.14 |
申请人 |
HITACHI, LTD. |
发明人 |
SAKAI, YOSHIO;NAKAMURA, HIDEO |
分类号 |
H01L21/822;H01L21/765;H01L21/768;H01L23/522;H01L27/04;H01L27/06;H01L27/088;(IPC1-7):H01L27/04 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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