| 摘要 |
PURPOSE:To improve degree of integration, by coating gate polysilicon by an insulating film whose etching characteristic is different from SiO2, thereafter providing source drain contact holes in an interlayer film, thereby reducing the size of said part. CONSTITUTION:On an Si substrate 11, a gate part having a gate oxide film 12, gate polysilicon 13, and an Si3N4 19 is formed. Source drain diffused layers 14 are further formed on both sides of the gate part on the Si substrate 11. Then, a phosphous silicate glass film PSG 20 is formed on the entire surface of the Si substrate 11. After light etching, Si3N4 film is deposited on the entire surface of the substrate. The Si3N4 film 21 is made to remain only at the side surface of the gate polysilicon 13. Then, the PSG film 20 is removed. An interlayer film 15 is deposited on the surface after the removal of the film 20. Source drain contact holes 16 are provided in the interlayer film 15. Wiring metal 17 is formed on the interlayer film 15. |
