| 摘要 |
PURPOSE:To obtain a photoreceptor having high initial potential and superior characteristics during repeated copying and causing little drak attenuation, by forming a photosensitive amorphous silicon layer on a substrate made of an Al alloy contg. a specified percentage of Mn or Mg. CONSTITUTION:The surface of a substrate made of an Al alloy contg. 1- 1.5wt% Mn or 2.2-5wt% Mg is polished to 0.05-1.5mumS surface roughness by means of a grindstone or the like. An aluminum oxide film 2 is formed on the surface of the surface-polished substrate 1 by surface oxidation, and a charge blocking layer 5 of 50Angstrom -1mum thickness is formed on the film 2. A charge transferring layer 4 of amorphous silicon carbide or amorphous silicon nitride is formed on the layer 5, and a photosensitive amorphour silicon layer 3 is further formed on the layer 4 to obtain the desired photoreceptor. |
