| 摘要 |
PURPOSE:To enable to stabilize the element with small number of lattice defects by a method wherein, opposed to the specific resistance of the layer in the neighborhood of one main surface of a Si substrate, the specific resistance of said Si substrate except for the layer in the neighborhood is set in a specified range. CONSTITUTION:A single crystal layer 2 is formed to approx. 10mum, on one surface of the desired Si substrate wherein conductivity type is P type, etc., by epitaxial growth by means of the gas whose main constituents are hydrogen and monosilane. When phosphine is mixed in the gas, the Si single crystal of N type can be obtained; while, when diborane is mixed, that of P type can be obtained. For the purpose of stabiizing the potential of the substrate, the specific resistance of the Si substrate 1 is set at 1/2-1/10 of the specific resistance which the Si single crystal layer 2 has. When sources 3 and 3', a drain 4, gate insulation films 5, gate electrodes 6 and 6', and a capacity part 7 are formed by a photoetching technique using a photo resist, a RAM element can be obtained. |
