| 摘要 |
PURPOSE:To flatten an undulating substrate efficiently by using a resin liquid, which can cure at a temperature of 25 deg.C or more and displays flowability under the state in which a solvent is not made contain before curing. CONSTITUTION:An Si substrate 11 to which an Si dioxide layer 12 is formed is heated for ten min at 700 deg.C in an oxygen atmosphere, and the resin liquid of which a diarylphthalate resin, a diarylphthalate monomer and a dicumyl peroxide are dissolved in diacetone-alcohol at melting temperatures and filtered by a filter is rotary-applied. The resin is cured through heat treatment for sixty min at 80 deg.C in a nitrogen atmosphere in order to produce flowability to form a resin layer 16. Plasma whole-surface etching using oxygen as a reaction gas is executed. A diarylphthalate layer 17 is left only in the recessed section of the Si dioxide layer. The Si dioxide layer is etched through plasma treatment using C3 F, and an Si dioxide buried layer 12' is formed through plasma treatment. |
