| 发明名称 |
THREE TERMINAL DIODE AND MOUNTING OF A MAIN SEMICONDUCTOR COMPONENT AND THE DIODE IN A SINGLE HOUSING |
| 摘要 |
<p>In the pressure association of a main component such as a Darlington transistor or an amplifying gate thyristor and a storage diode, a specific destorage diode comprising an annular junction. Thus, transversally to the center of the diode a N+NN+ structure appears while, transversally to the periphery an N+NP structure exists.</p> |
| 申请公布号 |
EP0032068(B1) |
申请公布日期 |
1984.01.25 |
| 申请号 |
EP19800401600 |
申请日期 |
1980.11.07 |
| 申请人 |
LE SILICIUM SEMICONDUCTEUR SSC |
发明人 |
BACUVIER, PIERRE |
| 分类号 |
H01L21/60;H01L23/48;H01L23/58;H01L25/18;H01L29/06;H01L29/861;(IPC1-7):01L21/60;01L23/56;01L25/04 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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