| 摘要 |
PURPOSE:To facilitate formation of a thin film by applying a DC voltage to a substrate and simultaneously applying an AC voltage or pulse voltage on the occasion of forming a thin film having a large coersive force of which composition changes periodically or layer by layer in the film thickness direction by a high frequency sputtering method. CONSTITUTION:A target board 5 placing a target 4 within bell-jar 8 and a substrate holder 7 attaching a substrate 6 at the lower surface are opposingly arranged with the predetermined interval, the target 4 is connected to a high frequency power supply 3 and a voltage of DC power supply 2 and a bias voltage sent from the AC power supply 1 are supplied to the substrate 6 through the holder 7. Herein an alloy target of Gd25Co75 is used as the target 4, while Si is used as the substrate 6. The inside of bell-jar 8 is filled with Ar of 5X10<-3> Torr and a DC voltage of -50V and a bias voltage of 0.1Hz are supplied to the substrate 6. Thereby, a material just suitable for thermal magnetic data recording and vertical magnetic recording can be obtained. |
