| 发明名称 |
Method and apparatus for doping semiconductor material |
| 摘要 |
Method for doping semiconductor material, including a container into which doping material is led and aimed at the semiconductor material by means of an electrical field, which includes maintaining the doping material in a plasma in the container, and leading doping material ions into the semiconductor material by means of the electrical field, and an apparatus for carrying out the method.
|
| 申请公布号 |
US4434036(A) |
申请公布日期 |
1984.02.28 |
| 申请号 |
US19820374415 |
申请日期 |
1982.05.03 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HOERSCHELMANN, KONSTANTIN;KAUSCHE, HELMOLD;SPAETH, WERNER |
| 分类号 |
H01L21/22;C30B31/16;C30B31/22;H01L21/223;H01L21/265;(IPC1-7):H01L21/22;H01J17/00 |
主分类号 |
H01L21/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
