| 摘要 |
PURPOSE:To prevent the deterioration of the characteristics of a region for an enhancement-mode type element on the formation of a region for a depletion- mode type element when manufacturing the semiconductor device of E/D constitution. CONSTITUTION:A high-purity GaAs layer 2, an N type AlGaAs layer 3 and an N type GaAs layer 4 are grown on a semi-insulating GaAs substrate 1 through a MBE method or a NOCVD method. A recessed section 2A reaching the GaAs layer 2 from the surface is formed. A film such as a cover film 6 consisting of a silicon dioxide film is formed, and an N type GaAs layer 7 is formed. A photo- resist film 8 is formed on the formation prearranged region of the depletion- mode type element region. The layer 7 and the layer 4 are patterned, and the cover film 6 and the photo-resist film 8 are removed, thus obtaining the region E for the enhancement-mode type element and the region D for the depletion-mode type element. |
