| 摘要 |
A process for manufacturing high-resistance elements for integrated circuits, in which the resistors are positioned on a layer of silica covering an integrated circuit, in a polycrystalline silicon zone possessing high resistivity, current supply lines being formed of a layer of polycrystalline silicon possessing low resistivity, surmounted by a layer of tantalum silicide. Plugs of photosensitive resin, deposited on a layer of polycrystalline silicon, are used to mark out a zone where the resistor is to be positioned, from zones in which resistivity is reduced by doping, and also to "lift-off" the layer of tantalum silicide on top of the resistor position.
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