发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To obtain a semiconductor integrated circuit which operates at a relatively high speed with low current consumption and is integrated to a high degree by using TTL input and output buffers and an internal logical block in combination. CONSTITUTION:The TTL input buffer is formed of a bipolar transistor (TR), and the TT1 output buffer is formed of an MOSFET and a bipolar (TR). The internal logical block is formed of a CMOS gate array. The output signal from the CMOS gate is impressed directly to the gate of a phase splitter MOSFETM5 forming the TTL output buffer. The output of this FETM5 is transmitted to the totem pole type push-pull output circuit consisting of TRs Q1-Q4. Thus, the semiconductor integrated circuit device which operates at the relatively high speed with small current consumption and is integrated to the high degree is obtained.
申请公布号 JPS59149426(A) 申请公布日期 1984.08.27
申请号 JP19830022764 申请日期 1983.02.16
申请人 HITACHI SEISAKUSHO KK 发明人 URAGAMI KEN
分类号 H03K19/018;H03K19/08 主分类号 H03K19/018
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