| 摘要 |
PURPOSE:To increase internal series resistance on a path, and to improve the effect of current limitation by forming a different conduction type semiconductor region between the shortest distance of adjacent two-terminal protective diodes extending from the same conduction type adjacent semiconductor regions. CONSTITUTION:Two two-terminal protective diodes 3 and 4 are formed on a P well region 7 formed to a semiconductor substrate 8, and terminals 1 and 2 are each led out of contacts 5 and 6 formed to the diodes. In the constitution, internal series resistance is reduced remarkably because the diodes 3 and 4 and other terminals are connected directly through the well region 7. Consequently, a different conduction type semiconductor region of width (l) is formed previously to a notch shape while being positioned between the two diodes 3 and 4 in the well region 7. Accordingly, a current path between the diodes 3 and 4 is by- passed, internal series resistance is increased, and currents are limited effectively to the application of static electricity. |
