| 摘要 |
PURPOSE:To contrive to enhance the degree of integration of a semiconductor memory device by a method wherein the device is so constructed as to make a part of a floating gate to be positioned on a diffusion region for control interposing a thin insulating film between them. CONSTITUTION:An N<+> type source region 23, an N<+> type drain region 24, an N<+> type diffusion region 25 for a bit line, and an N<+> type diffusion region 26 for control are formed on the element region of a P type Si substrate 21. A floating gate 29 is formed on a channel region between the regions 23, 24 thereof and on a part of the region 26 interposing respectively thin oxide films 27, 28 between them. Moreover, a select gate 31 is formed on a channel region between the region 24 and the region 25 interposing a gate oxide film 30 between them. According to this construction, because capacity between the region 25 and the gate 29 can be set large without increasing the area, the degree of integration can be enhanced.
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