| 摘要 |
PURPOSE:To obtain a capacitor, capacitance and density thereof are large and leakage currents therefrom are little, by laminating three layers of a TaN layer, Ta layer and a TaN layer on an Si substrate through a high-frequency sputtering method, changing the three layers into a Ta oxide layer containing nitrogen, a Ta oxide layer and a Ta oxide layer containing nitrogen through plasma oxidation and forming a metallic electrode on the Ta oxide layer containing nitrogen as an uppermost layer. CONSTITUTION:A TaN layer 2, a Ta layer 3 and a TaN layer 4 are laminated and applied on a Si substrate 1 through a high-frequency sputtering method. The layer 2 is changed into a Ta layer 5 containing nitrogen, the layer 3 into a Ta oxide layer 6 and the layer 4 into a Ta layer 7 containing nitrogen through plasma oxidation treatment to the structure. An Al electrode 8 is formed on the layer 7, thus manufacturing a capacitor. Accordingly, the film quality of the layer 2 is compacted, a mutual reaction with the substrate 1 during plasma oxidation is inhibited, and leakage currents are reduced. An oxidation is equalized in the layer 4 because of the slow speed of oxidation, and the sudden oxidation of the layer 3 is inhibited and the oxidation of the layer 3 is made uniform. |
