| 摘要 |
PURPOSE:To reduce a polarization factor and moisture content as compared to PbO system glass by a method wherein a specific ratio of ZnO2, ZnF2, Al2O3, B2O3, PbO and SiO2 are contained and OH radical content in the glass is reduced. CONSTITUTION:A batch of 30-50wt% of ZnO2, 0.5-5wt% of ZnF2, 1-5wt% of Al2O3, 10-40wt% of B2O3, 10-30wt% of PbO and 1-20wt% of SiO2 is melted. OH radical content in the glass is reduced to a very small ratio of 500ppm or below by controlling the atmosphere in such a way as blowing dry air into the melted substance or by doping a reducing agent into the melted substance. By making the melted substance reductive, ZnF2 doped in the glass is decomposed and reacts with OH radical in the glass so that OH radical becomes HF to be removed or reduced. When the passivation glass thus obtained is applied to MOSFET, C-V characteristics of the device show a quite normal curve and also very little leakage value is obtained. |
