| 摘要 |
PURPOSE:To obtain a desired emitter region through a simple process by a method wherein reverse conduction type second and third regions are formed in one conduction type first region, one conduction type fourth region is formed in the second region, a transistor is constituted by the first, second and fourth regions and a diode by the first and third regions, the third and fourth regions are connected by a metallic film and a common electrode is shaped to the metallic film. CONSTITUTION:P type regions 22 and 23 are diffused and formed to an N type Si substrate 21 and an N type region 24 is shaped in the region 22, thus constituting an N-P-N type transistor using the substrate 21 as a collector, the region 22 as a base and the region 24 as an emitter. A diode using the substrate 21 as a cathode and the region 23 as an anode is constituted simultaneously. The whole surface is coated with an oxide film 25 and predetermined openings are bored, the regions 23 and 24 are connected by an Al metallic film 26, and an Al wiring 27 is bonded with the metallic film 26 and an Al wiring 28 is also bonded with the region 22. Accordingly, the emitter region 24 of a desired shape is obtained while current concentration to the region 24 is avoided. |
