| 摘要 |
PURPOSE:To obtain an ion implanting magnetic bubble transfer line having a wide bias magnetic field margin by increasing the curvature radius of a semicircular part of the transfer line and decreasing the curvature radius of the other semicircular part respectively. CONSTITUTION:The curvature radius is set at 25mum for a semicircular part of the right side toward direction [1'1'2]. While the curvature radius is set at 1.75mum for a semicircular part of the left side. Thus a non-ion implanting area 1 and an ion implanting area 2 are formed. As a result, an ion implanting magnetic bubble transfer line is obtained with a large bias magnetic field margin. |
