| 摘要 |
PURPOSE:To stabilize oscillation and thus facilitate the manufacture by a method wherein the first conductivity type semiconductor of stripe form and the second conductivity type impurity diffused region of the upper clad layer are put in a state of no direct connection in an electric manner. CONSTITUTION:The lower clad layer 2, an active layer 4, and the upper clad layer 3 are successively formed on a substrate 1, and an N type GaAs layer 5 is formed on the upper clad layer 3. Next, after the layer 5 is mesa-etched into a stripe form by utilization of a mask 12, a P type impurity 13 is diffused until it reaches at least a semiconductor extremely thin film at the lowermost layer of the active layer 4. Then, after removal of the part 8 under the mask in which a P type impurity is diffused, the upper surface of the upper clad layer 3 is covered with an oxide film 9. Successively, the mask 12 is removed and thereafter AuGeNi10 is evaporated, thus being put in ohmic contact with the layer 5, and made as the N-side electrode. CrAu11 is evaporated on the back surface of the substrate crystal 1 and thus made as the P-side electrode, both end surfaces of the multilayer structure thus formed being cleft into a reflection mirror, and the title device is then obtained. |
