| 摘要 |
<p>Contacts between polysilicon conductors (21) on the surface of a silicon wafer (11) and doped regions (13) underlying them in the wafer, rendered defective by the growth of a thin intervening oxide layer (23) between conductors (21) and diffusions (13), are repaired by depositing dots of aluminum (25) on the conductors (21) in the contact areas and annealing the wafer (11) so as to drive traces of the aluminum through the conductors (21) and the intervening oxide (23) into the underlying doped regions (13) in the wafer (11).</p> |
