| 摘要 |
PURPOSE:To obtain a transistor of a fine structure by obtaining a fine gate electrode by a method wherein an asymmetric gate electrode is formed by anisotropic etching by the use of polycrystalline Si as the material, when the gate electrode of an MOS type transistor is prepared. CONSTITUTION:A thick field oxide film 22 is formed in the periphery of a P type Si substrate 21, and an oxide film 23 is provided from the part of gate electrode formation of the substrate 21 surrounded by that film to on the film 22. Next, a thin gate oxide film 24 is adhered to the exposed part remaining of the substrate 21, the asymmetric gate electrode 26 made of polycrystalline Si in contact with the end of the film 23 is mounted on the end of the oxide film. Thereafter, the film 23 is removed, and As<+> ions are implanted to the surface layer part of the substrate 1 with the electrode 26 as a mask, resulting in the deposit of an oxide film 27' on the side surface of the electrode 26. A deep implanted region connected to the implanted region provided previously is then formed by another time of As<+> ion implantation. The source region 28 consisting of a shallow N<-> region 28a and a deep N<+> type region 28b is generated by elongation diffusion, and the drain region 29 is formed in the same manner. |
