发明名称 |
Dielectric isolated circuit and method of making. |
摘要 |
<p>A method of integrated circuit fabrication and the resulting integrated circuit wherein areas (8) of recessed oxide isolation surround active device regions (3) and the bird's head (101) and bird's beak formed during formation of the recessed oxide regions (8) is eliminated by forming a deep dielectric isolation trench (9) directly over the bird's head (101). A very thin epitaxial layer (10) can be provided over the active device regions (3) of the integrated circuit. Preferably, the thin epitaxial layer (10) is selectively grown only over active device regions (3). Also, in later manufacturing steps, metal (31) is deposited in direct registration with contact areas.</p> |
申请公布号 |
EP0137195(A1) |
申请公布日期 |
1985.04.17 |
申请号 |
EP19840109400 |
申请日期 |
1984.08.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MALAVIYA, SHASHI DHAR;SRINIVASAN, GURUMAKONDA RAMASAMIENGAR |
分类号 |
H01L29/73;H01L21/20;H01L21/331;H01L21/762;H01L29/732;(IPC1-7):H01L21/76;H01L21/205 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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