发明名称 CMOS/SOS transistor gate array apparatus
摘要 A universal gate array is illustrated using a specific pattern of CMOS (Complementary Metal Oxide Silicon) Transistors in an array which provides a high degree of board utilization in the layout of small runs of integrated circuits where the high cost of completely customized boards is unacceptable. The array comprises a continuing pattern of two sets of three (3) series connected transistors in a cell surrounded on all four sides by cells each containing two single transistor gates of each channel type.
申请公布号 US4513307(A) 申请公布日期 1985.04.23
申请号 US19820375059 申请日期 1982.05.05
申请人 ROCKWELL INTERNATIONAL CORPORATION 发明人 BROWN, JAMES L.
分类号 H01L27/118;H01L27/12;(IPC1-7):H01L27/12;H01L27/10;H01L29/78 主分类号 H01L27/118
代理机构 代理人
主权项
地址