| 摘要 |
PCT No. PCT/JP80/00106 Sec. 371 Date Jan. 12, 1981 Sec. 102(e) Date Jan. 12, 1981 PCT Filed May 17, 1980 PCT Pub. No. WO80/02624 PCT Pub. Date Nov. 27, 1980.In order to reduce the area of one-transistor/one-capacitor memory cells, silicon nitride is used as the dielectric film for the capacitors and the memory cells are isolated from each other by a combination of thick insulating films and field shield layers. In addition, the capacitor electrodes are formed in self-alignment with the patterning of the field shield layers and gate electrodes of transistors, so that the area of the capacitors need not be increased in order to compensate for the anticipated error in positioning the capacitor electrodes.
|
